| 1. | Reactive sputter etching system
反应性溅镀蚀刻系统 |
| 2. | Reactive sputtering system
反应性溅镀系统 |
| 3. | Reactive sputtering source
反应溅射源 |
| 4. | Hysteresis in aluminum oxides films growth with pulsed reactive sputtering
铝靶脉冲反应溅射沉积氧化铝薄膜中的迟滞回线的研究 |
| 5. | The designed films of sio2 and sio2 / si are prepared on sample and hemisphere dome of sapphire by radio frequency magnetron reactive sputtering method
利用射频磁控反应溅射法，在蓝宝石试片和半球形头罩上制备出所设计的sio _ 2和sio _ 2 si增透膜系。 |
| 6. | Through the technology of rf and dc reactive sputtering manufacture , h2s gas sensors have been developed on silicon substrate on which a heater made of pt were attached
通过交流和直流反应溅射，我们以硅基片(表面上有白金加热电极)为基底制作h _ 2s气敏元件。 |
| 7. | The thesis main parts are as followings : ( 1 ) the mechanical properties of the cnx thin film on the various substrate materials by dc magnetron reactive sputtering . ( 2 ) the study of the cnx film structure by x - ray diffraction
文章主要部分介绍、论述、总结了我在做毕业论文期间进行的五方面工作： ( 1 )用直流磁控反应溅射方法在各种材料衬底上沉积cnx超硬薄膜，研究在不同衬底对薄膜的力学性质的影响。 |
| 8. | It was found that the decompose efficiency to solution associated with the number of films layer ; calcine temperature and ph value . some analyses have been performed . tio _ 2 films were also synthesized by reactive sputtering and chemical vapor deposition
通过溶胶凝胶法制备了tio _ 2薄膜对其进行光催化反应实验，发现膜层厚度、薄膜煅烧温度和溶液ph值对降解效率都有直接的影响，并对结果进行分析。 |
| 9. | We researched fabrication at different asputtering and annealing atmosphere , the different process conduced different electrical properties . we can conclude a higher annealing temperature and higher proportion of o2 during reactive sputtering favors the improvement of electrical performances of hfo2 dielectrics ; 4 . the analysis of i - v curves of these devices displays different leakage current mechanism under different area of applied bias - voltage ; as to silc . there are different leakage current mechanism at influence of sil . c ; 5
研究表明，在优化工艺条件下制备的hfo _ 2介质层中，衬底注入条件下由于其较低的体和界面缺陷密度，漏电流的输运机制主要以schottky发射为主; silc效应导致hfoz / si界面缺陷态的增加，从而使得衬底注入条件下，栅泄漏电流机制不仅有schottky发射还有f一p发射机制起主要作用; 5 )初步研究了氮化的hfo : ( hroxny )栅介质的电学特征。 |
| 10. | The experiments show an room temperature in the course of reactive sputtering conduces to restraining the surface reaction between hf02 and si layer ; 2 . we studied different surface progress . comparable with conventional method , the surface with nh4f cleaning step have superior thermal stability with hfo2 , nh4f cleaning step is introduced can reduces leakage current and eot ; 3
栅泄漏电流的减小可归于氧空位缺陷的减小，即高的溅射氧气氛和氧气氛退火有助于减小hfo _ 2栅介质中的氧空位缺陷； 4 )研究了反应溅射制备的hfo _ 2栅介质漏电流机制及其silc效应。 |
